| PART |
Description |
Maker |
| 1851342 |
FK-MCP 1,5/13-STF-3,81
|
Phoenix Contact
|
| M6MGT331S4BKT M6MGB331S4BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| AM49DL640BG25IS AM49DL640BG25IT AM49DL640BG35IS |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 堆叠式多芯片封装（MCP）闪存和SRAM
|
Spansion, Inc.
Spansion Inc.
Advanced Micro Devices
|
| S71WS-NX0 S71WS512ND0BFWA23 S71WS512NC0BFWA23 S71W |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S75PL127NBFJFWGZ2 S75PL127NCFJFWGZ3 S75PL256NCFJFW |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion, Inc.
|
| S73WS-P S75WS256NDGBFWLH2 S75WS256NDGBFWLH0 S75WS2 |
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion Inc.
Spansion, Inc.
|
| DS42546 AM29DL163D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
From old datasheet system
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| DS42587 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| MB84VD22280FE-70 MB84VD22280FA-70 MB84VD22290FE-70 |
2-Stacked MCP
|
Fujitsu
|
| MB84VD2118XEM-70 MB84VD2119XEM-70 |
2-Stacked MCP
|
Fujitsu
|
| K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5 |
MCP MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
